• DocumentCode
    978779
  • Title

    Crosstalk-insensitive via-programming ROMs using content-aware design framework

  • Author

    Chang, Meng-Fan ; Chiou, Lih-Yih ; Wen, Kuei-Ann

  • Author_Institution
    Intellectual Property Libr. Co., Hsin-Chu
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • fDate
    6/1/2006 12:00:00 AM
  • Firstpage
    443
  • Lastpage
    447
  • Abstract
    Various code patterns of a via-programming read only memory (ROM) cause significant fluctuations in coupling noise between bitlines (BLs). This crosstalk between BLs leads to read failure in high-speed via-programmable ROMs and limits the coverage of applicable code patterns. This work presents a content-aware design framework (CADF) for via-programming ROMs to overcome the crosstalk induced read failure. The CADF ROMs employ a content-aware structure and correspondent code-structure programming algorithm to reduce the amount of coupling noise source while maintaining nonminimal BL load for crosstalk reduction. A 256-Kb conventional ROM and a 256-Kb CADF ROM were fabricated using a 0.25-mum logic CMOS process. The measured results ascertain that the read induced read failure is suppressed significantly by CADF. The CADF ROM also reduced 86.2% and 94.5% in power consumption and standby current compared to the conventional ROM, respectively
  • Keywords
    CMOS logic circuits; crosstalk; high-speed integrated circuits; read-only storage; 0.25 micron; 256 kbit; bitlines; code patterns; code-structure programming algorithm; content-aware design framework; coupling noise; crosstalk-insensitive via-programming ROM; logic CMOS process; read failure; via-programming read only memory; CMOS logic circuits; CMOS process; Crosstalk; Energy consumption; Fluctuations; Logic programming; Noise reduction; Parasitic capacitance; Read only memory; Voltage; Code patterns; crosstalk; read only memory (ROM);
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2006.873640
  • Filename
    1643458