Title :
980 nm spread index laser with strain compensated InGaAs/GaAsP/InGaP and 90% fibre coupling efficiency
Author :
Vakhshoori, D. ; Hobson, W.S. ; Han, Hu ; Lopata, J. ; Wynn, J.D. ; deJong, J. ; Schnoes, M.L. ; Zydzik, G.J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ
fDate :
5/23/1996 12:00:00 AM
Abstract :
Single transverse and lateral mode InGaAs/GaAsP/InGaP 980 nm SPIN (spread index) ridge waveguide lasers (3 μm×750 μm) with symmetric far fields of Θ⊥×Θ|| =17°×15°, slope efficiency of ηext=0.9 W/A and threshold current of Ith=24 mA have been demonstrated. 90% coupling to singlemode lensed fibre and 52% direct buttcoupling to cleaved fibre has been achieved
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; optical couplers; optical fibre couplers; refractive index; semiconductor lasers; waveguide lasers; 24 mA; 3 mum; 52 percent; 750 mum; 90 percent; 980 nm; InGaAs-GaAsP-InGaP; InGaAs/GaAsP/InGaP; cleaved fibre; direct buttcoupling; fibre coupling efficiency; nm spread index laser; semiconductor lasers; singlemode lensed fibre; slope efficiency; spread index ridge waveguide lasers; strain compensated; symmetric far fields; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960629
