DocumentCode
978828
Title
Low threshold room temperature continuous wave operation of 1.3 μm GaInAsP/InP strained layer multiquantum well surface emitting laser
Author
Uchiyama, S. ; Yokouchi, N. ; Ninomiya, T.
Author_Institution
Optoelectron. Furukawa Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
Volume
32
Issue
11
fYear
1996
fDate
5/23/1996 12:00:00 AM
Firstpage
1011
Lastpage
1013
Abstract
A 1.3 μm GaInAsP/InP strained-layer multiquantum well surface-emitting (SE) laser has been demonstrated. Room temperature continuous wave (CW) operation is obtained. The threshold current is 4.7 mA, which is a record low value for a 1.3 μm SE laser, at 20°C. The highest CW operating temperature of 22°C for a 1.3 μm SE laser is also achieved
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; quantum well lasers; surface emitting lasers; μm SE laser; 1.3 mum; 20 C; 22 C; 4.7 mA; CW operating temperature; GaInAsP-InP; GaInAsP/InP strained layer multiquantum well surface emitting laser; low threshold room temperature continuous wave operation; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960676
Filename
503087
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