Title :
Measurement of J/V characteristics of a GaAs submicron n+-n¿-n+ diode
Author :
Hollis, Mark A. ; Eastman, L.F. ; Wood, C.E.C.
Author_Institution :
Cornell University, School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Ithaca, USA
Abstract :
The J/V characteristics of a GaAs 0.24 ¿m channel length n+-n¿-n+ diode have been measured at 8 K, 77 K and 300 K. Good agreement is observed with the J/V predictions recently reported by Awano et al. using a Monte-Carlo simulation of a similar device. This verifies the accuracy of their model, and substantiates their findings that electron transport in a 0.25 ¿m channel is near-ballistic at 77 K, with a peak ensemble-average electron velocity approaching 108 cm s¿1 for an ensemble-average energy just under 0.36 eV. An effective time-average velocity of about half this value can be expected for the total channel transit.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; semiconductor diodes; GaAs submicron n+-n--n+ diode; III-V semiconductors; J/V characteristics; electron transport; near-ballistic transport; peak ensemble-average electron velocity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820386
