Title :
1.0¿1.6 ¿m planar avalanche photodiode by LPE grown InP/InGaAs/InP DH structure
Author :
Shirai, Tokimasa ; Yamazaki, Shumpei ; Yasuda, Kazuhiro ; Mikawa, T. ; Nakajima, Kensuke ; Kaneda, Tadahiro
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
A planar avalanche photodiode is for the first time fabricated using the (111)A face of InP/InGaAs/InP double-hetero-(DH)-structure. The top InP layer where the carrier-multiplication takes place is directly grown on the In0.53Ga0.47As layer by liquid phase epitaxy. Maximum avalanche multiplication factors of 25 are obtained in a wavelength range of 1.0¿1.6 ¿m. Quantum efficiencies are 70¿80% at this wavelength range.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 1.0 micron to 1.6 microns; III-V semiconductors; InP/InGaAs/InP DH structure; avalanche multiplication factors; carrier multiplication; liquid phase epitaxy; planar avalanche photodiode; quantum efficiencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820389
