DocumentCode
978933
Title
1.0¿1.6 ¿m planar avalanche photodiode by LPE grown InP/InGaAs/InP DH structure
Author
Shirai, Tokimasa ; Yamazaki, Shumpei ; Yasuda, Kazuhiro ; Mikawa, T. ; Nakajima, Kensuke ; Kaneda, Tadahiro
Author_Institution
Fujitsu Laboratories Ltd., Kawasaki, Japan
Volume
18
Issue
13
fYear
1982
Firstpage
575
Lastpage
577
Abstract
A planar avalanche photodiode is for the first time fabricated using the (111)A face of InP/InGaAs/InP double-hetero-(DH)-structure. The top InP layer where the carrier-multiplication takes place is directly grown on the In0.53Ga0.47As layer by liquid phase epitaxy. Maximum avalanche multiplication factors of 25 are obtained in a wavelength range of 1.0¿1.6 ¿m. Quantum efficiencies are 70¿80% at this wavelength range.
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 1.0 micron to 1.6 microns; III-V semiconductors; InP/InGaAs/InP DH structure; avalanche multiplication factors; carrier multiplication; liquid phase epitaxy; planar avalanche photodiode; quantum efficiencies;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820389
Filename
4246526
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