High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

Author

Mahajan, Aditya ; Fay, Patrick ; Caneau, Catherine ; Adesida, I.

Author_Institution

Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL

Volume

32

Issue

11

fYear

1996

fDate

5/23/1996 12:00:00 AM

Firstpage

1037

Lastpage

1038

Abstract

The fabrication of 1.0 μm gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched InAlAs/InGaAs/InP material system is reported. Typical device DC characteristics include a threshold voltage of 275 mV, transconductance of 650 mS/mm, output conductance of 7.0 mS/mm, and an off-state breakdown voltage of 16 V. The devices exhibited excellent RF performance with an f_t of 35 GHz and an f_max of 80 GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 1.0 micron; 16 V; 80 GHz; DC characteristics; E-HEMTs; InAlAs-InGaAs-InP; RF performance; enhancement mode high electron mobility transistors; fabrication; lattice matched devices; off-state breakdown voltage; output conductance; threshold voltage; transconductance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19960652

Filename

503104