• DocumentCode
    979007
  • Title

    Erratum: Variation of minority carrier lifetime with level of injection in p-n-junction devices

  • Author

    Agarwal, Sheetal K. ; Jain, S.C. ; Harsh, P.S.

  • Volume
    18
  • Issue
    13
  • fYear
    1982
  • Firstpage
    584
  • Keywords
    carrier lifetime; elemental semiconductors; germanium; minority carriers; p-n homojunctions; semiconductor diodes; silicon; Ge diode; Si diode; forward current-induced voltage decay methods; injection level; minority carrier lifetime; p-n-junction devices; reverse recovery; semiconductor diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820398
  • Filename
    4246535
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979007