Title :
Thermally stable InAlAs/InGaAs heterojunction FET with AlAs/InAs superlattice insertion layer
Author :
Fujihara, Akihiro ; Onda, Kohei ; Nakayama, Taiki ; Miyamoto, Hideaki ; Ando, Y. ; Wakejima, A. ; Mizuki, E. ; Kuzuhara, Masaaki
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga
fDate :
5/23/1996 12:00:00 AM
Abstract :
A novel InAlAs/InGaAs heterojunction FET (HJFET), with an AlAs/InAs superlattice inserted between an InAlAs Schottky layer and an InAlAs donor layer, is proposed. The developed device exhibited initial DC characteristics identical to those of the conventional lattice-matched HJFET and improved thermal stability owing to the inserted superlattice layer acting as a barrier against impurity diffusion
Keywords :
III-V semiconductors; aluminium compounds; diffusion barriers; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor superlattices; thermal stability; AlAs-InAs; AlAs/InAs superlattice insertion layer; DC characteristics; HJFET; InAlAs-InGaAs; InAlAs/InGaAs heterojunction FET; SPRINT; Schottky layer; donor layer; impurity diffusion barrier; thermal stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960645
