• DocumentCode
    979047
  • Title

    Source-drain follower for monolithically integrated sensor array

  • Author

    Nakazato, K. ; Ohura, M. ; Uno, S.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Nagoya Univ., Nagoya
  • Volume
    43
  • Issue
    23
  • fYear
    2007
  • Abstract
    A source-drain follower has been designed and implemented in 1.2 mum standard CMOS technology. The circuit acts as a voltage follower, in which a sensing transistor is operated at fixed gate-source and gate-drain voltages, and operates at 10 nW with 10 mV accuracy in a 24 times 65 mum active area.
  • Keywords
    CMOS integrated circuits; biosensors; sensor arrays; CMOS technology; DNA chip; biosensor chip; gate-drain voltage; gate-source voltage; monolithically integrated sensor array; power 10 nW; sensing transistor; size 1.2 mum; source-drain follower; voltage 10 mV; voltage follower;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071905
  • Filename
    4384257
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979047