Title :
Source-drain follower for monolithically integrated sensor array
Author :
Nakazato, K. ; Ohura, M. ; Uno, S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Nagoya Univ., Nagoya
Abstract :
A source-drain follower has been designed and implemented in 1.2 mum standard CMOS technology. The circuit acts as a voltage follower, in which a sensing transistor is operated at fixed gate-source and gate-drain voltages, and operates at 10 nW with 10 mV accuracy in a 24 times 65 mum active area.
Keywords :
CMOS integrated circuits; biosensors; sensor arrays; CMOS technology; DNA chip; biosensor chip; gate-drain voltage; gate-source voltage; monolithically integrated sensor array; power 10 nW; sensing transistor; size 1.2 mum; source-drain follower; voltage 10 mV; voltage follower;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071905
