• DocumentCode
    979084
  • Title

    Anomalous effect of carriers on dielectric constant of (In,Ga)(As,P) lasers operating at 1.3 ¿m wavelength

  • Author

    Turley, S.E.H.

  • Author_Institution
    Standard Telecommunication Laboratories Ltd., Harlow, UK
  • Volume
    18
  • Issue
    14
  • fYear
    1982
  • Firstpage
    590
  • Lastpage
    592
  • Abstract
    Injected carriers were found to reduce the dielectric constant of the active layer by the unexpectedly high value of 0.4. This is a factor of approximately four greater than measured for GaAs/(Ga, Al)As lasers and also higher than other reported values for (In,Ga)(As,P) lasers operating at a wavelength of 1.6 ¿m. The technique employed was the observation of the spectral shift of individual Fabry-Perot modes of oxide insulated stripe lasers down to very low currents below threshold.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; permittivity; semiconductor junction lasers; (In, Ga)(As, P) lasers; 1.3 micron wavelength; Fabry-Perot modes; active layer; dielectric constant; injected carriers effect; oxide insulated stripe lasers; semiconductor laser; spectral shift;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820405
  • Filename
    4246543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979084