Title :
Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasers
Author :
Su, C.B. ; Schlafer, J. ; Manning, J. ; Olshansky, R.
Author_Institution :
GTE Laboratories Incorporated, Waltham, USA
Abstract :
Carrier lifetimes and spontaneous emission rates are reported for InGaAsP diode lasers. For active layers Zn-doped in the range 1¿2 × 1018/cm3 the radiative recombination constant B is 0.8 × 10¿10 cm3/s and the nonradiative constant C is 0.9 × 10¿28 cm6/s for a Cnp2 Auger process. For lightly doped lasers the Auger model alone cannot explain the data.
Keywords :
Auger effect; III-V semiconductors; carrier lifetime; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; Auger recombination rates; Zn-doped; carrier lifetime; p-type InGaAsP diode lasers; radiative recombination rates; semiconductor laser; spontaneous emission rates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820408
