Application of the 1-D silicon limit to varactors

Author

Van Noort, Wibo D. ; Deixler, Peter ; Havens, Ramon J. ; Rodriguez, Angel

Author_Institution

Philips Res. Leuven

Volume

53

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

1601

Lastpage

1607

Abstract

Solid-state varactor performance is evaluated in light of fundamental tradeoffs imposed by semiconductor material. This leads to the important conclusion that the product of Q factor, frequency, tuning range, and breakdown voltage has an upper limit (between 5 and 40 THzmiddotV for silicon) that is dictated primarily by semiconductor material parameters, and to a lesser degree on doping level and temperature. This limit is then approached by experimental hyperabrupt profiles with a product of 17 THzmiddotV that were fabricated in a SiGe BiCMOS process. Two complementary analysis techniques based on LCR and high-frequency measurements are presented

Keywords

Ge-Si alloys; elemental semiconductors; millimetre wave diodes; semiconductor device breakdown; varactors; 1D silicon limit; BiCMOS process; LCR; SiGe; complementary analysis; high-frequency measurements; semiconductor material; solid-state varactor; Frequency; Lead compounds; Q factor; Semiconductor device doping; Semiconductor materials; Silicon; Solid state circuits; Temperature distribution; Tuning; Varactors; BiCMOS; capacitor; silicon; varactors; varicap;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.875814

Filename

1643493