Title :
GaxIn1¿xAsyP1¿y/Gax¿,In1¿x¿,Asy¿,P1¿y¿, DH visible LED grown on (100) GaAs by LPE in the range of 670¿680 nm
Author :
Kawanishi, H. ; Hiraoka, Masatoshi
Author_Institution :
Kogakuin University, Department of Electronic Engineering, Tokyo, Japan
Abstract :
GaxIn1¿xAsyP1¿y/Gax¿,In1¿x¿,Asy¿,P1¿y¿ visible light emission diodes (LED) are reported. The double heterostructures were grown on (100) GaAs substrates by a liquid phase epitaxial (LPE) growth technique from a source melt rich in phosphorus. The wavelength of emitted light was 670¿680 nm at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; (100) GaAs substrates; 670; GaxIn1-xAsyP1-y DH visible LED; LPE; double heterostructures; semiconductor; to 680 nm wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820413
