• DocumentCode
    979170
  • Title

    High-sensitivity capacitive sensing interfacing circuit for monolithic CMOS M/NEMS resonators

  • Author

    Verd, J. ; Uranga, A. ; Abadal, G. ; Teva, J. ; Pérez-Murano, F. ; Barniol, N.

  • Author_Institution
    Dept. of Electron. Eng., Univ. Autbnoma de Barcelona, Barcelona
  • Volume
    43
  • Issue
    23
  • fYear
    2007
  • Abstract
    A simple and high-sensitivity 0.35 mum CMOS readout circuit for resonant M/NEMS with capacitive sensing is presented. The proposed readout scheme presents an equivalent transimpedance gain of 140 dB Omega (at 1 MHz) and an input referred noise of 29 nV/Hz1/2. Detection of submicrometre-scale cantilever vibrations in the MHz range is demonstrated with a displacement resolution of 33 ffn/Hz1/2.
  • Keywords
    CMOS integrated circuits; capacitance; micromechanical resonators; readout electronics; CMOS readout circuit; high-sensitivity capacitive sensing interfacing circuit; monolithic CMOS resonators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071866
  • Filename
    4384269
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979170