Title :
High-sensitivity capacitive sensing interfacing circuit for monolithic CMOS M/NEMS resonators
Author :
Verd, J. ; Uranga, A. ; Abadal, G. ; Teva, J. ; Pérez-Murano, F. ; Barniol, N.
Author_Institution :
Dept. of Electron. Eng., Univ. Autbnoma de Barcelona, Barcelona
Abstract :
A simple and high-sensitivity 0.35 mum CMOS readout circuit for resonant M/NEMS with capacitive sensing is presented. The proposed readout scheme presents an equivalent transimpedance gain of 140 dB Omega (at 1 MHz) and an input referred noise of 29 nV/Hz1/2. Detection of submicrometre-scale cantilever vibrations in the MHz range is demonstrated with a displacement resolution of 33 ffn/Hz1/2.
Keywords :
CMOS integrated circuits; capacitance; micromechanical resonators; readout electronics; CMOS readout circuit; high-sensitivity capacitive sensing interfacing circuit; monolithic CMOS resonators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071866
