DocumentCode :
979180
Title :
TLM diakoptics for coupled-mode analysis of GaAs MESFET distributed amplifier
Author :
Han, S. Y C ; Yung, E.K.N.
Author_Institution :
Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong
Volume :
143
Issue :
3
fYear :
1996
fDate :
6/1/1996 12:00:00 AM
Firstpage :
261
Lastpage :
264
Abstract :
A new model of the application of diakoptics in the transmission-line-matrix (TLM) method for the coupled-mode analysis of GaAs MESFET distributed amplifiers is proposed. The model takes into account the major coupling effect caused by Cdg and gm of the active devices. Techniques are developed by representing the whole system as two coupled lossy transmission lines. The numerical effort required can be reduced by representing the response of the resultant coupled system as that of superposition of two independent modes. The scattering matrix of the system obtained in the time domain leads to a process of discrete time domain convolutions based on the TLM numerical procedure. The results are compared with other analytical and computed results and show good agreement
Keywords :
III-V semiconductors; MESFET circuits; S-matrix theory; coupled mode analysis; distributed amplifiers; gallium arsenide; microwave amplifiers; network topology; transmission line matrix methods; GaAs; GaAs MESFET distributed amplifier; TLM diakoptics; active device; coupled lossy transmission lines; coupled-mode analysis; discrete time domain convolution; internal feedback capacitance; numerical method; scattering matrix; transconductance; transmission-line-matrix;
fLanguage :
English
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings
Publisher :
iet
ISSN :
1350-2417
Type :
jour
DOI :
10.1049/ip-map:19960427
Filename :
503120
Link To Document :
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