Analysis of the subthreshold current of pocket or halo-implanted nMOSFETs

Author

Hueting, Raymond J E ; Heringa, Anco

Author_Institution

MESA Res. Inst., Twente Univ., Enschede

Volume

53

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

1641

Lastpage

1646

Abstract

In this work, we analyzed the subthreshold current (I_D) of pocket implanted MOSFETs using extensive device simulations and experimental data. We present an analytical model for the subthreshold current applicable for any type of FET and show that the subthreshold current of nMOSFETs, which is mainly due to diffusion, is determined by the internal two-dimensional hole distribution across the device. This hole distribution is affected by the electric potential of the gate and the doping concentration in the channel. The results obtained allow accurate modelling of the subthreshold current of future generation MOS devices

Keywords

MOSFET; ion implantation; semiconductor device models; semiconductor doping; device simulation; doping concentration; electric potential; halo implanted MOSFET; hole distribution; nMOSFET; pocket implanted MOSFET; semiconductor device modeling; subthreshold current; Analytical models; CMOS technology; Implants; MOS devices; MOSFETs; Physics; Semiconductor device modeling; Semiconductor process modeling; Subthreshold current; Surface fitting; Complementary MOSFETs (CMOSFETs); MOS devices; current; semiconductor device modeling; simulation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.876284

Filename

1643498