Title :
Growth effects of In0.53Ga0.47As on InP structured substrates
Author :
Chand, Naresh ; Syrbu, A.V. ; Houston, P.A.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
LPE growth studies of In0.53Ga0.47As on structured InP substrates orientated in the (100) and (111)B planes have been carried out. A reluctance to grow in the [111]A and [111]B directions has been found while nucleation readily occurs on (100) faces and rounded surfaces. Selective growth in etched channels was possible without masking.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; substrates; In0.53Ga0.47As; InP structured substrates; LPE growth; etched channels; nucleation; selective growth; semiconductor growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820419
