Title :
Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPE
Author :
Hersee, S. ; Baldy, M. ; Assenat, P. ; de Cremoux, B. ; Duchemin, J.P.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Abstract :
The letter describes the characteristics of a graded-refractive-index (GRIN) separate-confinement-heterostructure (SCH) laser grown by organometallic vapour-phase-epitaxy (OM VPE). The structure has an average threshold current density of 410 A cm¿2 for a chip size (190 ¿m × 392 ¿m) which decreases to 260 A cm¿2 for a cavity length of 1352 ¿m. The structure has a T0 of between 154 and 171 K and an internal quantum efficiency of 90% ± 10%.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GRIN-SCH; GaAs/GaAlAs laser; OM VPE; graded-refractive index; internal quantum efficiency; organometallic vapour-phase-epitaxy; semiconductor laser; separate-confinement-heterostructure; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820423
