DocumentCode
979242
Title
Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPE
Author
Hersee, S. ; Baldy, M. ; Assenat, P. ; de Cremoux, B. ; Duchemin, J.P.
Author_Institution
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Volume
18
Issue
14
fYear
1982
Firstpage
618
Lastpage
620
Abstract
The letter describes the characteristics of a graded-refractive-index (GRIN) separate-confinement-heterostructure (SCH) laser grown by organometallic vapour-phase-epitaxy (OM VPE). The structure has an average threshold current density of 410 A cm¿2 for a chip size (190 ¿m × 392 ¿m) which decreases to 260 A cm¿2 for a cavity length of 1352 ¿m. The structure has a T0 of between 154 and 171 K and an internal quantum efficiency of 90% ± 10%.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GRIN-SCH; GaAs/GaAlAs laser; OM VPE; graded-refractive index; internal quantum efficiency; organometallic vapour-phase-epitaxy; semiconductor laser; separate-confinement-heterostructure; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820423
Filename
4246561
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