Title :
Electrothermal model for an SOI-based LIGBT
Author :
Gamage, Sahan S H U ; Pathirana, Vasantha ; Udrea, Florin
Author_Institution :
Dept. of Eng., Cambridge Univ.
fDate :
7/1/2006 12:00:00 AM
Abstract :
Several vertical insulated gate bipolar transistor (IGBT) electrothermal models are currently available on circuit simulators. However, no reliable electrothermal models have been proposed for the lateral IGBT (LIGBT). In this paper, for the first time, an electrothermal model for an LIGBT structure based on a novel concept recently reported by Udrea (IEDM, p. 451, 2004), and here termed silicon-on-membrane, is presented. The model relies on a systematic study of both the isothermal and self-heating behaviors of the device. The model is further implemented in the SPICE circuit simulator language and validated against extensive Medici numerical simulations and experimental data
Keywords :
insulated gate bipolar transistors; semiconductor device models; silicon-on-insulator; Medici numerical simulations; SOI-based LIGBT; SPICE circuit simulator language; electrothermal model; isothermal behaviors; lateral IGBT; lateral insulated gate bipolar transistor; self-heating behaviors; silicon-on-membrane; Biomembranes; Circuit simulation; Electrothermal effects; Insulated gate bipolar transistors; Numerical simulation; Power integrated circuits; Power system modeling; SPICE; Silicon on insulator technology; Substrates; Electrothermal effects; modeling; power semiconductor devices; silicon-on-insulator (SOI) technology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.876281
