Electrothermal model for an SOI-based LIGBT

Author

Gamage, Sahan S H U ; Pathirana, Vasantha ; Udrea, Florin

Author_Institution

Dept. of Eng., Cambridge Univ.

Volume

53

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

1698

Lastpage

1704

Abstract

Several vertical insulated gate bipolar transistor (IGBT) electrothermal models are currently available on circuit simulators. However, no reliable electrothermal models have been proposed for the lateral IGBT (LIGBT). In this paper, for the first time, an electrothermal model for an LIGBT structure based on a novel concept recently reported by Udrea (IEDM, p. 451, 2004), and here termed silicon-on-membrane, is presented. The model relies on a systematic study of both the isothermal and self-heating behaviors of the device. The model is further implemented in the SPICE circuit simulator language and validated against extensive Medici numerical simulations and experimental data

Keywords

insulated gate bipolar transistors; semiconductor device models; silicon-on-insulator; Medici numerical simulations; SOI-based LIGBT; SPICE circuit simulator language; electrothermal model; isothermal behaviors; lateral IGBT; lateral insulated gate bipolar transistor; self-heating behaviors; silicon-on-membrane; Biomembranes; Circuit simulation; Electrothermal effects; Insulated gate bipolar transistors; Numerical simulation; Power integrated circuits; Power system modeling; SPICE; Silicon on insulator technology; Substrates; Electrothermal effects; modeling; power semiconductor devices; silicon-on-insulator (SOI) technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.876281

Filename

1643504