Title :
Accurate boundary integral calculation in semiconductor device simulation
Author :
Gusmeroli, Riccardo ; Spinelli, Alessandro S.
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano
fDate :
7/1/2006 12:00:00 AM
Abstract :
An accurate method for the evaluation of boundary integrals in semiconductor device modeling is presented. The method is compared against more common algorithms and can achieve both high accuracy and low computational time. The range of applications is extremely wide, including contact currents and charges, carrier quantum probability fluxes, and heat fluxes
Keywords :
boundary integral equations; semiconductor device models; boundary integral calculation; carrier quantum probability fluxes; contact charges; contact currents; heat fluxes; semiconductor device model; semiconductor device simulation; Boundary conditions; Computational modeling; Contacts; Electron devices; Integral equations; Partial differential equations; Piecewise linear approximation; Samarium; Semiconductor device modeling; Semiconductor devices; MOSFETs; partial differential equations (PDEs); semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.875806
