DocumentCode
979359
Title
Measurement of low-noise column readout circuits for CMOS image sensors
Author
Kawai, Nobuhiro ; Kawahito, Shoji
Author_Institution
Graduate Sch. of Electron. Sci. & Technol., Shizuoka Univ., Hamamatsu
Volume
53
Issue
7
fYear
2006
fDate
7/1/2006 12:00:00 AM
Firstpage
1737
Lastpage
1739
Abstract
This brief describes the measurement results of high-gain column readout circuits for CMOS image sensors. The measurement results show that the double-stage noise-canceling architecture has better noise performance than that of the single-stage architecture at a first-stage gain of greater than 6. The lowest input-referred noise is measured to be 49 muVrms at a gain of 24
Keywords
CMOS image sensors; integrated circuit noise; readout electronics; 24 dB; 49 muV; CMOS image sensors; circuit noise; column readout circuits; double-stage noise-canceling architecture; input-referred noise; Active noise reduction; CMOS image sensors; Circuit noise; Gain measurement; Image sensors; Noise cancellation; Noise measurement; Noise reduction; Pulse amplifiers; Switches; CMOS image sensor; double-stage noise-canceling architecture; high-gain column amplifier; noise reduction;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2006.875813
Filename
1643511
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