DocumentCode
979367
Title
Simple and accurate size calculation of MOS transistor
Author
Bernardson, P.
Author_Institution
GTE Microcircuits, Tempe, USA
Volume
18
Issue
14
fYear
1982
Firstpage
632
Lastpage
634
Abstract
The letter describes an analytical solution to the problem of finding a correct size of a MOS transistor required to charge a load capacitance to a wanted voltage level within a given time. The resultant formula is extremely simple, yet very accurate. It could be utilised by an LSI designer, as well as in automatic design algorithms. The expression for the channel width over channel length ratio was derived from the second-order drain current equations for both regions, saturated as well as linear (not from simplified, first-order approximations).
Keywords
insulated gate field effect transistors; semiconductor device models; LSI; MOS transistor; MOSFET; accurate size calculation; automatic design algorithms; channel length; channel width; second-order drain current equations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820432
Filename
4246570
Link To Document