• DocumentCode
    979367
  • Title

    Simple and accurate size calculation of MOS transistor

  • Author

    Bernardson, P.

  • Author_Institution
    GTE Microcircuits, Tempe, USA
  • Volume
    18
  • Issue
    14
  • fYear
    1982
  • Firstpage
    632
  • Lastpage
    634
  • Abstract
    The letter describes an analytical solution to the problem of finding a correct size of a MOS transistor required to charge a load capacitance to a wanted voltage level within a given time. The resultant formula is extremely simple, yet very accurate. It could be utilised by an LSI designer, as well as in automatic design algorithms. The expression for the channel width over channel length ratio was derived from the second-order drain current equations for both regions, saturated as well as linear (not from simplified, first-order approximations).
  • Keywords
    insulated gate field effect transistors; semiconductor device models; LSI; MOS transistor; MOSFET; accurate size calculation; automatic design algorithms; channel length; channel width; second-order drain current equations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820432
  • Filename
    4246570