Title :
Simple and accurate size calculation of MOS transistor
Author_Institution :
GTE Microcircuits, Tempe, USA
Abstract :
The letter describes an analytical solution to the problem of finding a correct size of a MOS transistor required to charge a load capacitance to a wanted voltage level within a given time. The resultant formula is extremely simple, yet very accurate. It could be utilised by an LSI designer, as well as in automatic design algorithms. The expression for the channel width over channel length ratio was derived from the second-order drain current equations for both regions, saturated as well as linear (not from simplified, first-order approximations).
Keywords :
insulated gate field effect transistors; semiconductor device models; LSI; MOS transistor; MOSFET; accurate size calculation; automatic design algorithms; channel length; channel width; second-order drain current equations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820432
