مرکز منطقه ای اطلاع رساني علوم و فناوري - Low resistance, unannealed ohmic contacts to n-type InAs<sub>0.66</sub>Sb<sub>0.34</sub>

DocumentCode :

979454

Title :

Low resistance, unannealed ohmic contacts to n-type InAs_0.66Sb_0.34

Author :

Champlain, J.G. ; Magno, R. ; Boos, J.B.

Author_Institution :

Naval Res. Lab., Washington

Volume :

Issue :

fYear :

2007

Abstract :

Unannealed Ti/Pt/Au contacts to n-type lnAs_0.66Sb_0.34 were fabricated and measured. Extremely low specific contact resistances down to 2.4 times 10^-8 Omega cm² were measured, commensurate with In_0.53Ga_0.47As, InAs, and In_0.27Ga_0.73Sb contact schemes with higher doping, which is due to the very high electron mobility in rnAs_0.66Sh_0.34 and hypothesised pinning of the surface Fermi level within the conduction band.

Keywords :

Fermi level; III-V semiconductors; arsenic compounds; contact resistance; gold alloys; heterojunction bipolar transistors; indium compounds; ohmic contacts; platinum alloys; titanium alloys; TiPtAu-InAs_0.66Sb_0.34; conduction band; specific contact resistances; surface Fermi level; unannealed ohmic contacts; very high electron mobility;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:20072224

Filename :

4384295

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=979454