Title :
A radiation-hard AGC stabilized SOS crystal oscillator
Author :
Redman-White, William ; Dunn, Roy ; Lucas, Rex ; Smithers, Peter
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
fDate :
2/1/1990 12:00:00 AM
Abstract :
A 12 MHz crystal oscillator/divider fabricated in silicon on sapphire (SOS) is presented. The chip incorporates a significant analog component, as an automatic gain control (AGC) loop is used to minimize the influence of changing transistor parameters due to radiation. The design tackles the problems associated with realizing analog circuitry in a floating substrate technology and the use of circuit techniques to achieve radiation hardness. A simple system-level modeling method is used to predict the oscillator start-up and AGC loop stability. The measured stability is around 0.1 p.p.m./V; circuits are still functional at more than 50 Mrad (Si) and show frequency deviations of typically 8 p.p.m. from nominal
Keywords :
MOS integrated circuits; automatic gain control; crystal resonators; frequency dividers; frequency stability; linear integrated circuits; radiation hardening (electronics); radiofrequency oscillators; 12 MHz; 5×107 rad; AGC stabilized; Colpitt´s circuit; RF type; SOS crystal oscillator; Si-Al2O3; analog circuitry; automatic gain control; floating substrate technology; loop stability; monolithic IC; oscillator start-up; radiation hardness; system-level modeling method; Analog circuits; Application specific integrated circuits; Circuit stability; Frequency measurement; Gain control; Oscillators; Paper technology; Predictive models; Silicon; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
