DocumentCode :
979536
Title :
A Simple Figure of Merit of RF MOSFET for Low-Noise Amplifier Design
Author :
Song, Ickhyun ; Jeon, Jongwook ; Jhon, Hee-Sauk ; Kim, Junsoo ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Inter-Univ. Semicond. Res. Center, Seoul
Volume :
29
Issue :
12
fYear :
2008
Firstpage :
1380
Lastpage :
1382
Abstract :
In this letter, it is proposed that gm 2/ID, which has been used as the figure of merit (FoM) of MOSFETs for analog amplifiers, can also be used as the RF MOSFET FoM for optimizing low-noise amplifier (LNA) performance. From a simple small-signal equivalent circuit, signal gain, noise figure, and power consumption equations are derived analytically and verified with the measurement results of the fabricated LNA. The proposed gm 2/ID predicts the optimal bias point for the maximum LNA performance.
Keywords :
MOSFET; equivalent circuits; low noise amplifiers; RF MOSFET; analog amplifiers; figure of merit; low-noise amplifier design; noise figure; power consumption equation; signal gain; small-signal equivalent circuit; Channel thermal noise; MOSFET; figure of merit (FoM); low-noise amplifier (LNA); shot noise;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2006863
Filename :
4667664
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=979536
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