• DocumentCode
    979536
  • Title

    A Simple Figure of Merit of RF MOSFET for Low-Noise Amplifier Design

  • Author

    Song, Ickhyun ; Jeon, Jongwook ; Jhon, Hee-Sauk ; Kim, Junsoo ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Inter-Univ. Semicond. Res. Center, Seoul
  • Volume
    29
  • Issue
    12
  • fYear
    2008
  • Firstpage
    1380
  • Lastpage
    1382
  • Abstract
    In this letter, it is proposed that gm 2/ID, which has been used as the figure of merit (FoM) of MOSFETs for analog amplifiers, can also be used as the RF MOSFET FoM for optimizing low-noise amplifier (LNA) performance. From a simple small-signal equivalent circuit, signal gain, noise figure, and power consumption equations are derived analytically and verified with the measurement results of the fabricated LNA. The proposed gm 2/ID predicts the optimal bias point for the maximum LNA performance.
  • Keywords
    MOSFET; equivalent circuits; low noise amplifiers; RF MOSFET; analog amplifiers; figure of merit; low-noise amplifier design; noise figure; power consumption equation; signal gain; small-signal equivalent circuit; Channel thermal noise; MOSFET; figure of merit (FoM); low-noise amplifier (LNA); shot noise;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2006863
  • Filename
    4667664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979536