A 2055-V (at 0.7 $\hbox {mA/cm}^{2}$ ) 24-A (at 706 $\hbox {W/cm}^{2}$ ) Normally On 4H-SiC JFE

A normally on 4H-SiC vertical-junction field-effect transistor (VJFET) of 6.8-mm² active area was manufactured in seven photolithographic levels with no epitaxial regrowth and a single masked ion-implantation event. The VJFET exhibits low leakage currents with very sharp onsets of voltage breakdowns. At a forward gate bias of 2.5 V, the VJFET outputs 24 A (353 A/cm²) at a forward drain-voltage drop of 2 V (706 W/cm²), with a current gain of I_D/I_G = 21818, and a specific ON-state resistance of 5.7 mOmegaldrcm². Self-aligned floating guard rings provide edge termination that blocks 2055 V at a gate bias of -37 V and a drain-current density of 0.7 mA/cm². This blocking voltage corresponds to 94.4% of the VJFET´s 11.7-mum/3.46 times 10¹⁵-cm³ SiC drift layer limit and is the highest reported blocking-voltage efficiency of any SiC power device under similar drain-current-density conditions.