Title :
Monte-Carlo simulation of space-charge injection FET
Author :
Fauquembergue, R. ; Pernisek, M. ; Constant, E.
Author_Institution :
Université des Sciences et Techniques de Lille I, Centre Hyperfréquences et Semiconducteurs, LA au CNRS 287, Villeneuve d´´Ascq, France
Abstract :
Results of Monte-Carlo simulation of a new type of transistor, the space charge injection FET, are reported. Owing to the use of submicron undoped active regions, it seems possible to achieve low values of gate capacitance associated with high values of transconductance leading to a gain-bandwidth product close to the submillimetric wavelength range.
Keywords :
Monte Carlo methods; field effect transistors; semiconductor device models; simulation; space charge; Monte-Carlo simulation; gain-bandwidth product; gate capacitance; space-charge injection FET; submicron undoped active regions; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820456
