Title :
Maximum Stable Collector Voltage for Junction Transistors
Author :
Schmeltzer, Robert A.
Author_Institution :
Semiconductor and Materials Division, RCA, Somerville, N.J.
fDate :
3/1/1960 12:00:00 AM
Abstract :
A study is made of the conditions for stability of junction transistors operating in the pre-avalanche breakdown region in order to establish on quantitative grounds the maximum collector voltage that can be applied to the transistor for stable operation. A method is shown by which this peak voltage can be calculated from a knowledge of the circuit configuration, mode of emitter bias, rate of heat generation, and ambient temperature.
Keywords :
Avalanche breakdown; Breakdown voltage; Charge carrier processes; Circuit stability; Electric breakdown; Heating; Ionization; Temperature; Thermal resistance; Thermal stability;
Journal_Title :
Proceedings of the IRE
DOI :
10.1109/JRPROC.1960.287605
