Title :
Regenerative switching device using MBE-grown gallium arsenide
Author :
Wood, C.E.C. ; Eastman, L.F. ; Board, K. ; Singer, K. ; Malik, Rohit
Author_Institution :
Cornell University, School of Electrical Engineering & National Research & Resource Facility for Submicron Structures, Ithaca, USA
Abstract :
A new form of two-state switching device is proposed which is formed entirely within the semiconductor bulk during epitaxial growth. The predicted switching action is demonstrated using MBE-grown gallium arsenide and the device is shown to have optical sensitivity. The device is amenable to simple design rules and is free of the `forming¿ state often associated with the tunnel MIS switch.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor epitaxial layers; semiconductor switches; MBE grown GaAs; epitaxial growth; optical sensitivity; p-n junction; regenerative switching device; semiconductor; two-state switching device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820460
