• DocumentCode
    979637
  • Title

    Regenerative switching device using MBE-grown gallium arsenide

  • Author

    Wood, C.E.C. ; Eastman, L.F. ; Board, K. ; Singer, K. ; Malik, Rohit

  • Author_Institution
    Cornell University, School of Electrical Engineering & National Research & Resource Facility for Submicron Structures, Ithaca, USA
  • Volume
    18
  • Issue
    15
  • fYear
    1982
  • Firstpage
    676
  • Lastpage
    677
  • Abstract
    A new form of two-state switching device is proposed which is formed entirely within the semiconductor bulk during epitaxial growth. The predicted switching action is demonstrated using MBE-grown gallium arsenide and the device is shown to have optical sensitivity. The device is amenable to simple design rules and is free of the `forming¿ state often associated with the tunnel MIS switch.
  • Keywords
    III-V semiconductors; gallium arsenide; semiconductor epitaxial layers; semiconductor switches; MBE grown GaAs; epitaxial growth; optical sensitivity; p-n junction; regenerative switching device; semiconductor; two-state switching device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820460
  • Filename
    4246599
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979637