Defect Generation in p-MOSFETs Under Negative-Bias Stress: An Experimental Perspective

Author

Mahapatra, Souvik ; Alam, Muhammad Ashraful

Author_Institution

Indian Inst. Technol. of Bombay, Mumbai

Volume

8

Issue

1

fYear

2008

fDate

3/1/2008 12:00:00 AM

Firstpage

35

Lastpage

46

Abstract

In this paper, a focused review is made of our previously reported (2002-2007) work on negative-bias temperature-instability (NBTI) measurement and analysis. Using suitable cross-reference to other published work, the impacts of stress condition, characterization technique, and gate-oxide process on measured NBTI parameters are reviewed. The large scatter of measured time, bias, and temperature dependencies of NBTI, which are observed in published literature, is carefully analyzed. A common framework for NBTI physical mechanism is suggested and discussed. Issues lacking proper understanding at present are also highlighted.

Keywords

MOSFET; defect generation; gate-oxide process; negative-bias stress; negative-bias temperature-instability measurement; p-MOSFET; stress condition; Bulk traps; NBTI; Si oxynitride; bulk traps; charge pumping; charge pumping (CP); hole trapping; hot-hole generation; interface traps; negative-bias temperature instability (NBTI); on-the-flu I$_{DLIN}$; on-the-fly (OTF) $I_{rm DLIN}$ ; p-MOSFETs; reaction–diffusion (RD) model; reaction-diffusion model;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2007.912261

Filename

4384324