Title :
Low-temperature (~77 K) properties of InP MOSFETs using anodic-oxide gate insulator
Author :
Yamamoto, Akiyasu ; Shibukawa, Atsushi ; Yamaguchi, Masaki ; Uemura, C.
Author_Institution :
NTT Ibaraki Electrical Communication Laboratory, Tokai, Japan
Abstract :
The letter describes advantages of low-temperature (~77 K) operation for InP MOSFETs using an anodic oxide of InP as the gate insulator. By cooling the device to about 100 K, the electron effective mobility in the device is increased by 5¿8 times that at room temperature. Moreover, an increasing drift of drain current observed at room temperature disappears completely.
Keywords :
III-V semiconductors; carrier mobility; indium compounds; insulated gate field effect transistors; InP MOSFETs; anodic-oxide gate insulator; drain current; electron effective mobility; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820483
