• DocumentCode
    979855
  • Title

    Hydrogen passivation of deep donor centres in high-purity epitaxial GaAs

  • Author

    Pearton, S.J. ; Tavendale, A.J.

  • Author_Institution
    Australian Atomic Energy Commission, Applied Physics Division, Research Laboratories, Sutherland, Australia
  • Volume
    18
  • Issue
    16
  • fYear
    1982
  • Firstpage
    715
  • Lastpage
    716
  • Abstract
    The passivation of deep donor centres in high-purity, liquid-phase-epitaxial n-GaAs (ND¿NA = 8¿10 × 1013 cm¿3) by reaction with atomic hydrogen has been observed using deep-level transient spectroscopy. Exposure to the hydrogen plasma for 3 h at 300°C neutralised 99% of the deep levels to a depth of approximately 7 ¿m.
  • Keywords
    III-V semiconductors; deep level transient spectroscopy; deep levels; gallium arsenide; passivation; semiconductor epitaxial layers; DLTS; H2 passivation; LPE n-GaAs; deep donor centres; deep-level transient spectroscopy; high-purity eptixial GaAs; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820486
  • Filename
    4246698
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979855