Title :
Hydrogen passivation of deep donor centres in high-purity epitaxial GaAs
Author :
Pearton, S.J. ; Tavendale, A.J.
Author_Institution :
Australian Atomic Energy Commission, Applied Physics Division, Research Laboratories, Sutherland, Australia
Abstract :
The passivation of deep donor centres in high-purity, liquid-phase-epitaxial n-GaAs (ND¿NA = 8¿10 × 1013 cm¿3) by reaction with atomic hydrogen has been observed using deep-level transient spectroscopy. Exposure to the hydrogen plasma for 3 h at 300°C neutralised 99% of the deep levels to a depth of approximately 7 ¿m.
Keywords :
III-V semiconductors; deep level transient spectroscopy; deep levels; gallium arsenide; passivation; semiconductor epitaxial layers; DLTS; H2 passivation; LPE n-GaAs; deep donor centres; deep-level transient spectroscopy; high-purity eptixial GaAs; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820486
