DocumentCode :
979941
Title :
The Impact of NBTI Effect on Combinational Circuit: Modeling, Simulation, and Analysis
Author :
Wenping Wang ; Shengqi Yang ; Bhardwaj, S. ; Vrudhula, S. ; Liu, F. ; Yu Cao
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Volume :
18
Issue :
2
fYear :
2010
Firstpage :
173
Lastpage :
183
Abstract :
Negative-bias-temperature instability (NBTI) has become the primary limiting factor of circuit life time. In this paper, we develop a hierarchical framework for analyzing the impact of NBTI on the performance of logic circuits under various operation conditions, such as the supply voltage, temperature, and node switching activity. Given a circuit topology and input switching activity, we propose an efficient method to predict the degradation of circuit speed over a long period of time. The effectiveness of our method is comprehensively demonstrated with the International Symposium on Circuits and Systems (ISCAS) benchmarks and a 65-nm industrial design. Furthermore, we extract the following key design insights for reliable circuit design under NBTI effect, including: 1) During dynamic operation, NBTI-induced degradation is relatively insensitive to supply voltage, but strongly dependent on temperature; 2) There is an optimum supply voltage that leads to the minimum of circuit performance degradation; circuit degradation rate actually goes up if supply voltage is lower than the optimum value; 3) Circuit performance degradation due to NBTI is highly sensitive to input vectors. The difference in delay degradation is up to 5?? for various static and dynamic operations. Finally, we examine the interaction between NBTI effect, and process and design uncertainty in realistic conditions.
Keywords :
CMOS logic circuits; circuit switching; combinational circuits; integrated circuit design; integrated circuit modelling; integrated circuit reliability; CMOS circuits; NBTI-induced degradation; aging; circuit lifetime; circuit performance degradation; circuit topology; combinational circuit; delay degradation; input switching activity; input vectors; logic circuits; negative-bias-temperature instability; node switching activity; supply voltage; temperature; Analytical models; Circuit optimization; Circuit simulation; Combinational circuits; Degradation; Niobium compounds; Performance analysis; Switching circuits; Titanium compounds; Voltage; Duty cycle; input pattern; negative bias temperature instability (NBTI); performance degradation; speed; supply voltage; temperature;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2008.2008810
Filename :
5031899
Link To Document :
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