• DocumentCode
    980036
  • Title

    InP high mobility enhancement MISFETs using anodically grown double-layer gate insulator

  • Author

    Sawada, Tsuyoshi ; Hasegawa, Hiroshi

  • Author_Institution
    Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
  • Volume
    18
  • Issue
    17
  • fYear
    1982
  • Firstpage
    742
  • Lastpage
    743
  • Abstract
    High-mobility InP enhancement MISFETs are fabricated with the use of a novel double-layer gate insulator consisting of Al2O3 and native oxide, both grown anodically by a simple process. Applying a fairly high-temperature annealing (400°C), channel mobilities of 1500¿3000 cm2/Vs and a large reduction of drain current drift are achieved.
  • Keywords
    III-V semiconductors; anodised layers; carrier mobility; indium compounds; insulated gate field effect transistors; Al2O3; IGFET; InP MISFET; anodically grown double-layer gate insulator; carrier mobility; channel mobilities; drain current drift; high mobility enhancement MISFET; high-temperature annealing; native oxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820503
  • Filename
    4246742
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980036