Title :
InP high mobility enhancement MISFETs using anodically grown double-layer gate insulator
Author :
Sawada, Tsuyoshi ; Hasegawa, Hiroshi
Author_Institution :
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Abstract :
High-mobility InP enhancement MISFETs are fabricated with the use of a novel double-layer gate insulator consisting of Al2O3 and native oxide, both grown anodically by a simple process. Applying a fairly high-temperature annealing (400°C), channel mobilities of 1500¿3000 cm2/Vs and a large reduction of drain current drift are achieved.
Keywords :
III-V semiconductors; anodised layers; carrier mobility; indium compounds; insulated gate field effect transistors; Al2O3; IGFET; InP MISFET; anodically grown double-layer gate insulator; carrier mobility; channel mobilities; drain current drift; high mobility enhancement MISFET; high-temperature annealing; native oxide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820503
