Title :
Room-temperature operation of a transverse-distributed-feedback cavity laser
Author :
Suemune, I. ; Kohno, M. ; Yamanishi, M.
Author_Institution :
Hiroshima University, Faculty of Engineering, Higashihiroshima, Japan
Abstract :
A new type of transverse-distributed-feedback cavity laser is proposed. A threshold current of a two-dimensional mode is 190 mA, and an output power of 30 mW is obtained at 1.5Ith. The far-field pattern is stable up to a measured current of 2.1Ith.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; laser modes; semiconductor junction lasers; GaAlAs-GaAs laser; far-field pattern; output power; room temperature operation; semiconductor laser; threshold current; transverse-distributed-feedback cavity laser; two-dimensional mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820505
