Title :
GaAlAs-GaAs ballistic hetero-junction bipolar transistor
Author :
Ankri, D. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
A novel heterojunction bipolar transistor structure is proposed using the ballistic electron motion concept. Electrons which surmount the conduction band spike barrier (<¿E¿¿L) are accelerated into the base at higher velocities than the diffusion velocity. Calculations derived from a drift-diffusion emission model illustrate the trade-off possible between the injection efficiency and the electron velocity through the base.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; semiconductor device models; GaAlAs-GaAs bipolar transistor; ballistic electron motion; base; conduction band spike barrier; drift-diffusion emission model; electron velocity; heterojunction bipolar transistor; injection efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820508
