Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

Author

Ohsato, K. ; Yoshimasu, T.

Author_Institution

Integrated Circuits Group, Sharp Corp., Nara, Japan

Volume

14

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

204

Lastpage

206

Abstract

An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.

Keywords

CMOS integrated circuits; MIMIC; amplifiers; personal communication networks; power consumption; silicon-on-insulator; 0.35 microns; 0.6 V; 1.6 GHz; 2 mA; 4.8 dB; 6.4 dB; CMOS MMIC technology; L-band personal communications; MMIC amplifier; Si; complementary metal oxide semiconductor; internally matched CMOS amplifier; monolithic microwave integrated circuit; silicon-on-insulator; ultralow DC power consumption CMOS amplifier; CMOS technology; Energy consumption; L-band; Low voltage; MMICs; Microwave amplifiers; Operational amplifiers; Power amplifiers; Semiconductor optical amplifiers; Silicon on insulator technology;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2004.827911

Filename

1296661