Title :
Processing of titanium films on silicon using a multiscanned electron beam
Author :
Maydell-Ondrusz, E.A. ; Hemment, P.L.F. ; Stephens, K.G. ; Moffat, S.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
A multiscanned electron beam has been used to process titanium films thermally on single-crystal silicon. The redistribution of titanium and the composition of the processed films were studied by Rutherford backscattering. Oxygen contamination within the titanium is found to control the reaction rate. Processing conditions have been established which give stoichiometric TiSi2 layers and the removal of oxygen from the system. These results have been confirmed by Auger analysis and the surface texture has been examined using scanning electron microscopy.
Keywords :
diffusion in solids; electron beam applications; metallic thin films; metallisation; semiconductor-metal boundaries; silicon; titanium; Auger analysis; O2 contamination; Rutherford backscattering; Si; Ti film processing; diffusion; multiscanned electron beam; scanning electron microscopy; semiconductor; stoichiometric TiSi2 layers; surface texture;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820509
