Title :
Low-resistance ohmic contacts to p-InP
Author :
Cheng, C.L. ; Coldren, Larry A. ; Miller, B.I. ; Rentschler, J.A. ; Shen, C.C.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
A new method for making low-resistance ohmic contacts to p-InP is described. Using layer-by-layer evaporated Au-Zn (25 wt% net Zn)/Cr/Au metallisation, specific contact resistance as low as 4.5 × 10¿5 ¿cm2 was obtained for p-InP with carrier concentration 2 × 1018 cm¿3. The effects of annealing temperature and time on the contact resistances were investigated.
Keywords :
III-V semiconductors; contact resistance; indium compounds; metallisation; ohmic contacts; semiconductor-metal boundaries; Au-Zn-Cr-Au metallisation; annealing temperature effects; carrier concentration; contact resistance; low-resistance ohmic contacts; p-InP; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820511
