Title :
Far-field radiation patterns of multiple quantum well lasers grown by MO-CVD
Author :
Halido, D. ; Lindstr¿¿m, C. ; Scifres, D.R.
Author_Institution :
Ministry of Defense, Electro-Optics Department, Haifa, Israel
Abstract :
The far-field radiation patterns of multiple quantum well lasers grown by metal-organic chemical vapour deposition (MO-CVD) with conducting stripe widths of 3, 5, 7 and 9 ¿m were studied. The results show that the existing antiguidance effect in conventional heterostructure GaAs/GaAlAs lasers is stronger in quantum well lasers due mainly to the thinner active regions.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAs/GaAlAs lasers; III-V semiconductor; MO-CVD; conducting stripe; far-field radiation patterns; metal-organic chemical vapor deposition; multiple quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820518
