• DocumentCode
    980315
  • Title

    Molecular-beam epitaxially grown 1.3 ¿m GaInAsP/InP double-heterostructure lasers

  • Author

    Tsang, W.T. ; Reinhart, F.K. ; Ditzenberger, J.A.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    18
  • Issue
    18
  • fYear
    1982
  • Firstpage
    785
  • Lastpage
    786
  • Abstract
    We report the first successful preparation of current-injection GaInAsP/InP double-heterostructure laser lasing at 1.3 ¿m by molecular beam epitaxy. For broad-area Fabry-Perot diodes of 380 ¿m×200 ¿m and an active layer thickness of 0.2 ¿m, we have observed threshold current densities Jth as low as 1.8 kA/cm2 and a median Jth¿3.5 kA/cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.3 micron; Fabry-Perot diodes; III-V semiconductors; MBE; current-injection GaInAsP/InP double-heterostructure laser; molecular beam epitaxy; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820530
  • Filename
    4246791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980315