Title :
Molecular-beam epitaxially grown 1.3 ¿m GaInAsP/InP double-heterostructure lasers
Author :
Tsang, W.T. ; Reinhart, F.K. ; Ditzenberger, J.A.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
We report the first successful preparation of current-injection GaInAsP/InP double-heterostructure laser lasing at 1.3 ¿m by molecular beam epitaxy. For broad-area Fabry-Perot diodes of 380 ¿m×200 ¿m and an active layer thickness of 0.2 ¿m, we have observed threshold current densities Jth as low as 1.8 kA/cm2 and a median Jth¿3.5 kA/cm2.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.3 micron; Fabry-Perot diodes; III-V semiconductors; MBE; current-injection GaInAsP/InP double-heterostructure laser; molecular beam epitaxy; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820530
