DocumentCode
980357
Title
Analysis of efficiency limitations in high-low emitter back surface field silicon solar cells
Author
Prat, L. ; Casta¿¿er, L.
Author_Institution
Universidad Politécnica de Barcelona, Departamento de Electrónica y Energia Solar, ETSI Telecomunicación, Barcelona, Spain
Volume
18
Issue
18
fYear
1982
Firstpage
789
Lastpage
790
Abstract
Analytical and numerical models have been used to analyse the electrical behaviour of HLE-BSF n+-n-p-p+ silicon solar cells. It is shown that this structure should have lower open-circuit voltage values than the simple HLE solar cell due to the recombination current in the p+ region. Back surface passivation is proposed as a means to improve the Voc, that can be as high as 650 mV.
Keywords
elemental semiconductors; semiconductor device models; silicon; solar cells; efficiency limitations; electrical behaviour; elemental semiconductor; high-low emitter back surface field Si solar cells; numerical models; open-circuit voltage; passivation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820534
Filename
4246795
Link To Document