Title :
Multiwafer vertical interconnects for three-dimensional integrated circuits
Author :
Lahiji, Rosa R. ; Herrick, Katherine J. ; Lee, Yongshik ; Margomenos, Alexandros ; Mohammadi, Saeed ; Katehi, Linda P B
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
fDate :
6/1/2006 12:00:00 AM
Abstract :
Low-loss multiwafer vertical interconnects appropriate for a microstrip-based circuit architecture are proposed. These transitions have been designed, fabricated, and measured for 100-mum-thick silicon and GaAs substrates separately. Experimental results show excellent performance up to 20 GHz, with extremely low insertion loss (better than 0.12 and 0.38 dB for the two different silicon designs and 0.2 dB for the GaAs transition), and very good return loss (reflection of better than 12.9 and 17.3 dB for the two silicon designs, respectively, and 13.6 dB for the GaAs design). Using a high-performance transition allows for a more power-efficient interconnect, while it enables denser packaging by stacking the substrates on top of each other, as today´s technologies demand
Keywords :
MMIC; integrated circuit interconnections; integrated circuit packaging; microstrip circuits; 100 micron; 3D integrated circuits; MMIC; high-performance transition; insertion loss; microstrip-based circuit architecture; multiwafer vertical interconnects; power-efficient interconnect; return loss; Gallium arsenide; Insertion loss; Integrated circuit interconnections; Integrated circuit measurements; Microstrip; Packaging; Performance loss; Reflection; Silicon; Three-dimensional integrated circuits; Integrated circuit packaging; microstrip line; vertical interconnects;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2006.874867
