Multiwafer vertical interconnects for three-dimensional integrated circuits

Author

Lahiji, Rosa R. ; Herrick, Katherine J. ; Lee, Yongshik ; Margomenos, Alexandros ; Mohammadi, Saeed ; Katehi, Linda P B

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN

Volume

54

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

2699

Lastpage

2706

Abstract

Low-loss multiwafer vertical interconnects appropriate for a microstrip-based circuit architecture are proposed. These transitions have been designed, fabricated, and measured for 100-mum-thick silicon and GaAs substrates separately. Experimental results show excellent performance up to 20 GHz, with extremely low insertion loss (better than 0.12 and 0.38 dB for the two different silicon designs and 0.2 dB for the GaAs transition), and very good return loss (reflection of better than 12.9 and 17.3 dB for the two silicon designs, respectively, and 13.6 dB for the GaAs design). Using a high-performance transition allows for a more power-efficient interconnect, while it enables denser packaging by stacking the substrates on top of each other, as today´s technologies demand

Keywords

MMIC; integrated circuit interconnections; integrated circuit packaging; microstrip circuits; 100 micron; 3D integrated circuits; MMIC; high-performance transition; insertion loss; microstrip-based circuit architecture; multiwafer vertical interconnects; power-efficient interconnect; return loss; Gallium arsenide; Insertion loss; Integrated circuit interconnections; Integrated circuit measurements; Microstrip; Packaging; Performance loss; Reflection; Silicon; Three-dimensional integrated circuits; Integrated circuit packaging; microstrip line; vertical interconnects;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2006.874867

Filename

1643606