A C-band high-efficiency second-harmonic-tuned hybrid power amplifier in GaN technology

Author

Colantonio, Paolo ; Giannini, Franco ; Giofrè, Rocco ; Limiti, Ernesto ; Serino, Antonio ; Peroni, Marco ; Romanini, Paolo ; Proietti, Claudio

Author_Institution

Dept. of Electron. Eng., Rome Univ. Tor Vergata

Volume

54

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

2713

Lastpage

2722

Abstract

In this paper, the design, fabrication, and test of high-efficiency, high-power C-band harmonic-tuned power amplifiers in GaN technology is reported. The amplifier has been designed utilizing second-harmonic tuning for high-efficiency operation, thus exploiting the high-breakdown voltage peculiarity of GaN-based devices. Realized in a hybrid form, the amplifier has been characterized in terms of small-signal, power, and intermodulation (IMD) performance. An operating bandwidth over 20% around 5.5 GHz, with 33-dBm minimum output power, and 60% drain efficiency at center frequency is demonstrated, together with low IMD

Keywords

circuit tuning; gallium compounds; intermodulation distortion; microwave power amplifiers; wide band gap semiconductors; C-band power amplifier; GaN; GaN technology; GaN-based devices; IMD performance; high-breakdown voltage; high-efficiency power amplifier; hybrid power amplifier; intermodulation performance; second-harmonic tuning; second-harmonic-tuned power amplifier; Bandwidth; Fabrication; Frequency; Gallium nitride; High power amplifiers; Operational amplifiers; Power amplifiers; Power generation; Testing; Voltage; Harmonic manipulations; high efficiency; low intermodulation; power amplifiers (PAs);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2006.874872

Filename

1643608