Title :
4 Gbit/s direct modulation of 1.3 ¿m InGaAsP/InP semiconductor lasers
Author :
Hagimoto, Ken ; Ohta, N. ; Nakagawa, Koichi
Author_Institution :
NTT Yokosuka Electrical Communication Laboratory, Yokosuka, Japan
Abstract :
It is confirmed that the multiplexer and the semiconductor laser can be operated up to 4 Gbit/s with pseudorandom pulse pattern. The relaxation oscillation, pattern effect and tailing effect of the semiconductor laser are also studied. It is confirmed that eye degradation is predominantly due to fluctuation of initial time delay caused by pattern effect, and tailing effect and relaxation oscillation are not fatal factors of 4 Gbit/s modulation under proper bias conditions.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; multiplexing equipment; optical communication equipment; optical modulation; semiconductor junction lasers; 4 Gbit/s direct modulation; III-V semiconductors; InGaAsP/InP semiconductor lasers; eye degradation; multiplexer; pseudorandom pulse pattern; relaxation oscillation; tailing effect; time delay;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820539
