Title :
High-efficiency short-cavity InGaAsP laser with one high-reflectivity mirror
Author :
Lee, T.P. ; Burrus, C.A. ; Liu, P.L. ; Dentai, A.G.
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
High differential quantum efficiency (70%), high output power (5 mW), and stable single-frequency output at high (1 Gbit/s) modulation rates have been obtained experimentally using short-cavity InGaAsP injection lasers with a metallic mirror on one facet only.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor junction lasers; 1 Gbit/s; III-V semiconductors; differential quantum efficiency; high reflectivity metallic mirrors; modulation rates; short-cavity InGaAsP injection lasers; stable single-frequency output;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820547
