• DocumentCode
    980515
  • Title

    Auger recombination rate in InGaAsP lasers

  • Author

    Burt, M.G.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    18
  • Issue
    19
  • fYear
    1982
  • Firstpage
    806
  • Lastpage
    807
  • Abstract
    For the Auger recombination rate in InGaAsP there is an order of magnitude discrepancy between the measurements by Su et al. and the calculations by Dutta and Nelson, and Sugimura. It is suggested that a major source of this discrepancy is the method used to calculate the overlap integrals. A calculation that supports this suggestion is described.
  • Keywords
    Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor junction lasers; Auger recombination; III-V semiconductors; InGaAsP lasers; overlap integrals;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820548
  • Filename
    4246839
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980515