Title :
Auger recombination rate in InGaAsP lasers
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
For the Auger recombination rate in InGaAsP there is an order of magnitude discrepancy between the measurements by Su et al. and the calculations by Dutta and Nelson, and Sugimura. It is suggested that a major source of this discrepancy is the method used to calculate the overlap integrals. A calculation that supports this suggestion is described.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor junction lasers; Auger recombination; III-V semiconductors; InGaAsP lasers; overlap integrals;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820548
