Title :
A Comparison of Fast Methods for Measuring NBTI Degradation
Author :
Reisinger, Hans ; Brunner, Ulrich ; Heinrigs, Wolfgang ; Gustin, Wolfgang ; Schlünder, Christian
Author_Institution :
Infineon Technol., Munich
Abstract :
Three fast measuring methods, namely, "on-the-fly," fast direct threshold-voltage (VT) determination, and fast drain-current measurement near VT, are compared. Problems of the different methods are thoroughly discussed, and an analysis of systematic and statistical errors has been done. An example comparing the VT data extracted from the three methods is given. The results help us to understand the root causes for the observed differences in drift curves.
Keywords :
MOSFET; electric current measurement; semiconductor device measurement; voltage measurement; MOSFET; NBTI degradation; fast direct threshold-voltage determination; fast drain-current measurement; on-the-fly method; statistical errors; systematic errors; Current measurement; Data mining; Degradation; Delay; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Stress measurement; Titanium compounds; Voltage; MOSFET; Measuring delay; negative bias temperature instability (NBTI); not given; pMOS; recovery;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2007.911385
