Title :
Single-mode InGaAsP/InP buried waveguide structures grown on channelled {111}B InP substrates
Author :
Benson, T.M. ; Syrbu, A.V. ; Chand, Naresh ; Houston, P.A.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
InGaAsP buried waveguide structures were fabricated by LPE on channelled {111}B InP substrates. Control of the channel depth and growth time enabled waveguides of small dimensions to be produced which supported one TE and one TM polarised mode only.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; liquid phase epitaxial growth; optical waveguides; semiconductor growth; III-V semiconductors; LPE; TE mode; TM polarised mode; channelled {111}B InP substrates; single-mode InGaAsP-InP buried waveguide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820552
