Title :
Algorithms for transient three-dimensional mixed-level circuit and device simulation
Author :
Mayaram, Kartikeya ; Chern, Jue-Hsien ; Yang, Ping
Author_Institution :
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Algorithms for transient mixed-level circuit and device simulation using a full two-carrier three-dimensional (3-D) device simulator SIERRA and the circuit simulator SPICE3 are presented. Circuit and device simulator coupling algorithms that are suited for two-dimensional mixed-level circuit and device simulation using direct solvers cannot be successfully employed when iterative solution techniques are used in 3-D device simulation. New algorithms to couple the circuit and 3-D device simulator have been developed and evaluated. The importance of 3-D mixed-level circuit and device simulation is demonstrated by applying it to single-event upset in CMOS SRAM cells
Keywords :
SPICE; circuit analysis computing; digital simulation; transient response; CMOS SRAM cells; SIERRA; SPICE3; circuit simulator; coupling algorithms; full two-carrier 3D device simulator; mixed-level circuit/device simulation; single-event upset; transient three-dimensional simulation; Analytical models; Circuit simulation; Context modeling; Coupling circuits; Iterative algorithms; Process design; Random access memory; Semiconductor process modeling; Single event upset; Transient analysis;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on